| PART |
Description |
Maker |
| MC33091A |
HIGH SIDE TMOS DRIVER 95 R0
|
Motorola
|
| L99DZ70XPTR L99DZ70XP |
Door actuator driver with 6 bridges for double door lock control, mirror fold and mirror axis control, highside driver for mirro
|
ST Microelectronics
STMicroelectronics
|
| MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 42 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| BTS441T BTS441TG BTS441TS Q67060-S6112-A4 Q67060-S |
High Speed CMOS Logic Dual 4-Input NOR Gates 14-SO -55 to 125
Smart High Side Switches - 4,75-41V, 20mΩ 21A TO220
Smart Highside Power Switch One Channel: 20mз
Smart Highside Power Switch One Channel: 20m?/a>
|
INFINEON[Infineon Technologies AG]
|
| MTSF1P02HD ON2655 |
SINGLE TMOS POWER MOSFET
SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM
From old datasheet system
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MTD1N80E MTD1N80E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
|
ON Semiconductor
Motorola, Inc
|
| MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G |
TMOS Power FET
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
|
ONSEMI[ON Semiconductor]
|
| BTS412B2 BTS412B2E3043 BTS412B2E3062A Q67060-S6109 |
Smart Highside Power Switch 智能阻抗高侧电源开
Transient Voltage Suppressor Diodes
High Speed CMOS Logic Dual 4-Input NOR Gates 14-SOIC -55 to 125
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
From old datasheet system
PROFET Smart High Side Power Switch
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
